Model for molecular‐beam‐epitaxy growth over nonplanar surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341490
Reference14 articles.
1. Damped oscillations in reflection high energy electron diffraction during GaAs MBE
2. Effects of diffraction conditions and processes on rheed intensity oscillations during the MBE growth of GaAs
3. Phase-Locked Epitaxy Using RHEED Intensity Oscillation
4. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
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