Revealing process‐induced strain fields in GaAs/AlGaAs lasers via electron irradiation in a scanning electron microscope
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349495
Reference17 articles.
1. A graded‐index waveguide separate‐confinement laser with very low threshold and a narrow Gaussian beam
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3. Mechanism of Fermi-level stabilization in semiconductors
4. Amphoteric native defects in semiconductors
5. Intrinsic Defects in GaAs - the Case of El2
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1. Fourier transform analysis method for modeling the positions and properties of cavity defects in Fabry–Pérot laser diodes;Applied Physics Letters;2005-02-07
2. Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers;The European Physical Journal Applied Physics;2004-07
3. Strain mapping by measurement of the degree of polarization of photoluminescence;Applied Optics;2004-03-19
4. Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars;IEEE Photonics Technology Letters;2002-07
5. The effect of mounting-induced strain and defect on the properties of AlGaAs 808 nm LDs;Synthetic Metals;2002-03
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