Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2004052/pdf
Reference8 articles.
1. Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation
2. Gradual degradation in 980 nm InGaAs/AlGaAs pump lasers
3. M. Bettiati et al., Phys. Stat. Sol. A195,159 (2003)
4. G. Patriarche, Solid State Phenom.51–52,131 (1996)
5. Influence of indium segregation on the emission from InGaAs/GaAs quantum wells
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