Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers-Reference-Cited by-同舟云学术

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Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers

Published:2003-01 Issue:1 Volume:195 Page:159-164
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Bettiati M.,Laruelle F.,Pommiès M.,Hallais G.,Jiménez J.,Avella M.,Rao E. V. K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence spectral imaging as a technique for the study of cavity degradation of high-power QW lasers;Materials Science in Semiconductor Processing;2006-02

2. Cation intermixing at quantum well/barriers interfaces in aged AlGaAs-based high-power laser diodes bars;Applied Physics Letters;2005-03-28

3. Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers;The European Physical Journal Applied Physics;2004-07

4. Laser diode reliability: crystal defects and degradation modes;Comptes Rendus Physique;2003-07

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