Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97631
Reference7 articles.
1. Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAs
2. Dislocations as the origin of threshold voltage scatterings for GaAs MESFET on LEC-grown semi-insulating GaAs substrate
3. Defect reduction in GaAs epitaxial layers using a GaAsP‐InGaAs strained‐layer superlattice
4. GaAsP-GaInAsSb superlattices: A new structure for electronic devices
5. Generation and propagation of defects into molecular beam epitaxially grown GaAs from an underlying GaAs substrate
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