MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon-Reference-Cited by-同舟云学术

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MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon

Published:2019-05-28 Issue: Volume: Page:
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Container-title:Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI
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Author:

Kumar Raman,Kumar Ravinder,Panda Debiprasad,Saha Jhuma,Tongbram Binita,Das Debabrata,Upadhyay Sourabh,Chatterjee Arka,Kumar Pal Samir,Chakrabarti Subhananda

Publisher

SPIE

Reference29 articles.

1. The Past, Present, and Future of Silicon Photonics

2. Silicon Photonics;Bahram Jalali,2006

3. Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)

4. Quantum-dot optoelectronic devices;Bhattacharya,2007

5. Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of 0.67 eV-InGaAs solar cell with InP window-layers of various thickness on virtual InP/AlGaInAs/GaAs substrates;Engineering Research Express;2021-10-13

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