Low‐temperature Si(001) epitaxy using low‐energy (〈E 〉≂18 eV) Si atoms
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112423
Reference18 articles.
1. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
2. Critical epitaxial thicknesses for low‐temperature (20–100 °C) Ge(001)2×1 growth by molecular‐beam epitaxy
3. Observation of a growth instability during low temperature molecular beam epitaxy
4. Surfactant-induced layer-by-layer growth of Ag on Ag(111)
5. Surfactant-induced layer-by-layer growth of Ag on Ag(111)
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