Effects of incident N atom kinetic energy on TiN/TiN(001) film growth dynamics: A molecular dynamics investigation-Reference-Cited by-同舟云学术

Effects of incident N atom kinetic energy on TiN/TiN(001) film growth dynamics: A molecular dynamics investigation

Published:2017-01-14 Issue:2 Volume:121 Page:025302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Edström D.¹,Sangiovanni D. G.¹²^ORCID,Hultman L.¹^ORCID,Petrov I.¹³,Greene J. E.¹³,Chirita V.¹^ORCID

Affiliation:

1. Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-58183 Linköping, Sweden

2. ICAMS, Ruhr-Universität Bochum, 44780 Bochum, Germany

3. Frederick Seitz Materials Research Laboratory and The Materials Science Department, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4972963

Reference47 articles.

1. Nanoindentation studies of single‐crystal (001)‐, (011)‐, and (111)‐oriented TiN layers on MgO

2. Structure and properties of TiN coatings

3. Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering

4. Structure and mechanical properties of TiAlN–WNx thin films

5. Vacancy hardening in single-crystal TiNx(001) layers

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