Growth of Si on Si(100) via H/Cl exchange and the effect of interfacial boron
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352261
Reference27 articles.
1. Atomic layer epitaxy
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3. Molecular layer epitaxy of silicon
4. Atomic layer epitaxy of silicon by dichlorosilane studied with core level spectroscopy
5. Self-Limiting Adsorption of SiCl2H2and Its Application to the Layer-by-Layer Photochemical Process
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