Mechanism of β-FeSi2precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers-Reference-Cited by-同舟云学术

Mechanism of β-FeSi2precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

Author:

De Luca Anthony¹,Texier Michaël¹,Portavoce Alain¹,Burle Nelly¹,Grosjean Catherine²,Morata Stéphane³,Michel Fabrice⁴

Affiliation:

1. Aix Marseille Université, CNRS, IM2NP UMR 7334, bd Escadrille Normandie Niémen, F-13397 Marseille, France

2. ST MicroElectronics, 190 av. Célestin Coq, Z.I. Peynier Rousset, F-13106 Rousset, France

3. Ion Beam Services, rue G. Imbert prolongée, Z.I. Peynier Rousset, F-13790 Rousset, France

4. Vegatec, 150 av. Célestin Coq, Z.I. Peynier Rousset, F-13106 Rousset, France

Funder

Fonds Unique Interministériel (Single Interministerial Fund)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference35 articles.

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