Mechanism of β-FeSi2precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers-Reference-Cited by-同舟云学术

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Mechanism of β-FeSi2precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

Published:2015-03-21 Issue:11 Volume:117 Page:115302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

De Luca Anthony¹,Texier Michaël¹,Portavoce Alain¹,Burle Nelly¹,Grosjean Catherine²,Morata Stéphane³,Michel Fabrice⁴

Affiliation:

1. Aix Marseille Université, CNRS, IM2NP UMR 7334, bd Escadrille Normandie Niémen, F-13397 Marseille, France

2. ST MicroElectronics, 190 av. Célestin Coq, Z.I. Peynier Rousset, F-13106 Rousset, France

3. Ion Beam Services, rue G. Imbert prolongée, Z.I. Peynier Rousset, F-13790 Rousset, France

4. Vegatec, 150 av. Célestin Coq, Z.I. Peynier Rousset, F-13106 Rousset, France

Funder

Fonds Unique Interministériel (Single Interministerial Fund)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4915086

Reference35 articles.

1. Calculation of channeling effects in ion implantation

2. Ostwald ripening of end-of-range defects in silicon

3. Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells

4. High-Temperature Oxidation of Sintered β-FeSi2 Bodies at Elevated Temperatures

5. Electron microscope study of electrically active impurity precipitate defects in silicon

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2. Investigation of the early stage of reactive interdiffusion in the Cu-Al system by in-situ transmission electron microscopy;Materialia;2020-03

3. Impact of Metals on Silicon Devices and Circuits;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

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5. Evolution of secondary defects in arsenic implanted Si;Japanese Journal of Applied Physics;2016-03-17

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