Calculation of channeling effects in ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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3. Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation;Optics Express;2012-08-15
4. Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling;Journal of Applied Physics;1998-04
5. Influence of dynamic annealing on the depth distribution of germanium implanted in (100) silicon at elevated temperatures;MRS Proceedings;1997
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