Surface recombination velocity imaging of wet-cleaned silicon wafers using quantitative heterodyne lock-in carrierography-Reference-Cited by-同舟云学术

Surface recombination velocity imaging of wet-cleaned silicon wafers using quantitative heterodyne lock-in carrierography

Author:

Sun Qiming¹²^ORCID,Melnikov Alexander¹,Mandelis Andreas¹²³,Pagliaro Robert H.⁴^ORCID

Affiliation:

1. Center for Advanced Diffusion-Wave and Photoacoustic Technologies (CADIPT), University of Toronto, Toronto, Ontario M5S 3G8, Canada

2. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China

3. Diffusion-Wave Diagnostic Technologies, Toronto, Ontario M1M 2V3, Canada

4. Advanced Processing Equipment Technology (APET) Co., Ltd, 20-15, Sukwoo-Dong, Hwaseong-City, Gyeonggi-do 463-802, South Korea

Funder

National Natural Science Foundation of China

Canada Research Chairs

Gouvernement du Canada | Natural Sciences and Engineering Research Council of Canada

Canada Foundation for Innovation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference27 articles.

4. D. K. Schroder , Semiconductor Material and Device Characterization, 3rd ed. ( John Wiley & Sons, 2015), p. 389.

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