Deep level transient spectroscopy study inn‐type InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330991
Reference6 articles.
1. A study of the deep electron traps in semiconducting CdS
2. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
3. Deep level transient spectroscopy of electron traps and sensitizing centers in undoped CdS single crystals
4. Deep traps in ideal n-InP Schottky diodes
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1. Investigation on deep level defects in rapid thermal annealed undoped n-type InP;Journal of Materials Science: Materials in Electronics;2009-05-07
2. Current-Voltage Measurements on Indium Phosphide Schottky Diodes;Defect and Diffusion Forum;2009-03
3. Mise en évidence des défauts profonds dans des structures MIS : Au-POxNyInz-(n)InP par la methode FTDLTS;Journal de Physique III;1997-02
4. Deep‐level transient spectroscopy of HF‐cleaned and sulfur‐passivated InP metal/nitride/semiconductor structures;Journal of Applied Physics;1994-04
5. Chapter 8 Deep Level Defects in Epitaxial III/V Materials;Imperfections in III/V Materials;1993
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