A study of the deep electron traps in semiconducting CdS
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326118
Reference12 articles.
1. The electrical properties and growth conditions of CdS crystals
2. Photoconductive properties of cadmium sulphide
3. Phonon Instabilities in TmVO4
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1. Photoluminescence enhancement and atmosphere-dependent photovoltaic performance in CdS nanorod arrays/MEH-PPV hybrid;Solar Energy Materials and Solar Cells;2011-12
2. Deep Impurity Centers in CdS Single Crystals Studied by Spectral Analysis of Deep Level Transient Spectroscopy;Japanese Journal of Applied Physics;1994-06-15
3. A new technique to decompose closely spaced interface and bulk trap states using temperature dependent pulse‐width deep level transient spectroscopy method: An application to PT/CdS photodetector;Journal of Applied Physics;1993-01-15
4. Space‐charge‐limited‐current diode model for the rectifying‐to‐ohmic transition with Au/Al contacts to CdS;Journal of Applied Physics;1987-11
5. DLTS of gold impurities in germanium;Semiconductor Science and Technology;1987-08-01
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