Deep‐level transient spectroscopy of HF‐cleaned and sulfur‐passivated InP metal/nitride/semiconductor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356114
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5. Channel mobility enhancement in InP metal‐insulator‐semiconductor field‐effect transistors
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