Electrical Properties of Epitaxial Ge Films Deposited on (111) CaF2 Substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1708944
Reference22 articles.
1. Formation Conditions and Structure of Ge Films Deposited on Polished (111) CaF2 Substrates in an Ultrahigh‐Vacuum System
2. Microstructure of Epitaxial Ge Films Deposited on (111) CaF2 Substrates
3. Effect of the Temperature of Formation on the Crystallinity and Electrical Properties of Germanium Films on Fluorite
4. Analysis of Thin‐Film Germanium Epitaxially Deposited onto Calcium Fluoride
5. Role of surface states in contributing to p-type carrier concentration of vacuum deposited thin germanium films
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1. Sputter Epitaxial Growth of Flat Germanium Film with Low Threading-Dislocation Density on Silicon (001);ECS Journal of Solid State Science and Technology;2014
2. 21-GHz-Bandwidth Germanium-on-Silicon Photodiode Using Thin SiGe Buffer Layers;IEEE Journal of Selected Topics in Quantum Electronics;2006-11
3. Growth and characterization of Si1−xGexand Ge epilayers on (100) Si;Journal of Applied Physics;1988-06-15
4. A novel heteroepitaxy method of Ge films on CaF2by electron beam exposure;Journal of Applied Physics;1988-02-15
5. Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers;Surface Science;1986-08
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