A novel heteroepitaxy method of Ge films on CaF2by electron beam exposure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340007
Reference14 articles.
1. Growth of semiconductor/insulator structures: GaAs/fluoride/GaAs (001)
2. Electrical Properties of Epitaxial Ge Films Deposited on (111) CaF2 Substrates
3. Epitaxial Growth of Ge Films onto CaF2/Si Structures
4. Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers
5. Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
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3. Surfactant enhanced solid phase epitaxy of Ge/CaF2/Si(111): Synchrotron x-ray characterization of structure and morphology;Journal of Applied Physics;2011-11-15
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