Gain characteristics of InGaN/GaN quantum well diode lasers-Reference-Cited by-同舟云学术

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Gain characteristics of InGaN/GaN quantum well diode lasers

Published:1998-03-23 Issue:12 Volume:72 Page:1418-1420
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Song Y.-K.,Kuball M.,Nurmikko A. V.,Bulman G. E.,Doverspike K.,Sheppard S. T.,Weeks T. W.,Leonard M.,Kong H. S.,Dieringer H.,Edmond J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.120607

Reference11 articles.

1. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells

2. Optical gain in GaInN/GaN heterostructures

3. Gain spectroscopy on InGaN/GaN quantum well diodes

4. Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers

5. Measurement and calculation of spontaneous recombination current and optical gain in GaAs‐AlGaAs quantum‐well structures

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2. Indium content dependent VOCs interactions in monolithic InGaN/GaN multi quantum well structures grown by MOCVD;Materials Science in Semiconductor Processing;2019-12

3. Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K;IEEE Electron Device Letters;2017-03

4. GaN Nanostructure-Based Light Emitting Diodes and Semiconductor Lasers;Journal of Nanoscience and Nanotechnology;2014-02-01

5. Thermal stability of GaN powders investigated by XRD, XPS, PL, TEM, and FT-IR;Journal of Alloys and Compounds;2008-10

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