Gain spectroscopy on InGaN/GaN quantum well diodes-Reference-Cited by-同舟云学术

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Gain spectroscopy on InGaN/GaN quantum well diodes

Published:1997-05-12 Issue:19 Volume:70 Page:2580-2582
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kuball M.,Jeon E.-S.,Song Y.-K.,Nurmikko A. V.,Kozodoy P.,Abare A.,Keller S.,Coldren L. A.,Mishra U. K.,DenBaars S. P.,Steigerwald D. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.118925

Reference9 articles.

1. Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

2. Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

3. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

4. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

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1. Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy;Semiconductors;2020-04

2. Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques;Applied Sciences;2019-12-27

3. High Temperature Behavior of Injection and Radiative Efficiencies and Its Effects on the Efficiency Droop in InGaN/GaN Light Emitting Diodes;Journal of Nanoscience and Nanotechnology;2016-11-01

4. Optical Engineering of Modal Gain in a III-Nitride Laser with Nanoporous GaN;ACS Photonics;2016-08-23

5. New directions in GaN photonics;SPIE Proceedings;2016-02-29

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