Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy-Reference-Cited by-同舟云学术

Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

Published:2021-07-29 Issue:10 Volume:258 Page:2100223
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Aggarwal Tarni¹,Udai Ankit¹,Banerjee Debashree¹,Pendem Vikas¹,Chouksey Shonal¹,Saha Pratim¹,Sankaranarayanan Sandeep¹,Ganguly Swaroop¹,Bhattacharya Pallab²,Saha Dipankar¹^ORCID

Affiliation:

1. Applied Quantum Mechanics Laboratory Department of Electrical Engineering Indian Institute of Technology Bombay Powai Mumbai 400076 India

2. Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI 48109-2122 USA

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100223

Reference84 articles.

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4. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

5. Fundamental energy gap of GaN from photoluminescence excitation spectra

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