Interfacial properties of InP and phosphorus deposited at low temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96188
Reference17 articles.
1. Metal‐insulator‐semiconductor diodes fabricated on InP, InGaAsP, and InGaAs
2. Inversion layers on InP
3. Electrical properties of the gallium arsenide–insulator interface
4. Investigation of heterojunctions for MIS devices with oxygen‐doped AlxGa1−xAs onn‐type GaAs
5. Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal‐insulator‐semiconductor devices
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic layer deposition of metal phosphates;Applied Physics Reviews;2022-03
2. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer;Nano Letters;2017-09-11
3. Surface state density distribution at vacuum-annealed InP(100) surface as derived from the rigorous analysis of photoluminescence efficiency;Applied Surface Science;2008-10
4. AES and EELS analysis of the interaction between phosphorus and metallic indium;Journal of Electron Spectroscopy and Related Phenomena;1994-05
5. Measurement of Surface Fermi Level in Phosphidized GaAs;Japanese Journal of Applied Physics;1992-11-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3