Thermal annealing effect on low temperature molecular beam epitaxy grown GaAs: Arsenic precipitation and the change of resistivity
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111216
Reference11 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
3. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
4. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
5. Nonalloyed ohmic contacts on low‐temperature molecular beam epitaxial GaAs: Influence of deep donor band
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