Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers-Reference-Cited by-同舟云学术

Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers

Published:2019-12-21 Issue:23 Volume:126 Page:235706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Balgos M. H.¹²^ORCID,Jaculbia R.¹^ORCID,Prieto E. A.²^ORCID,Tani M.³,Estacio E.²^ORCID,Salvador A.²,Somintac A.²^ORCID,Hayazawa N.¹²^ORCID,Kim Y.¹²^ORCID

Affiliation:

1. Surface and Interface Science Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

2. National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101, Philippines

3. Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Department of Science and Technology-Philippine Council for Industry, Energy, and Emerging Technology Research and Development

Department of Science and Technology

Commission on Higher Education - Philippine-California Advanced Research Institutes

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5118815

Reference39 articles.

1. Generation of femtosecond electromagnetic pulses from semiconductor surfaces

2. Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p-i-n-i heterostructure

3. THz emission from semiconductor surfaces

4. Significant performance enhancement in photoconductive terahertz optoelectronics by incorporating plasmonic contact electrodes

5. Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

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