Ultra-low resistance ohmic contacts in graphene field effect transistors-Reference-Cited by-同舟云学术

Ultra-low resistance ohmic contacts in graphene field effect transistors

Published:2012-05-14 Issue:20 Volume:100 Page:203512
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Moon J. S.,Antcliffe M.,Seo H. C.,Curtis D.,Lin S.,Schmitz A.,Milosavljevic I.,Kiselev A. A.,Ross R. S.,Gaskill D. K.,Campbell P. M.,Fitch R. C.,Lee K.-M.,Asbeck P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4719579

Reference17 articles.

1. The rise of graphene

2. Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

3. Roll-to-roll production of 30-inch graphene films for transparent electrodes

4. Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers

5. Graphene: Its Fundamentals to Future Applications

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