A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2431464
Reference17 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
3. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
4. Effective mass for strainedp‐type Si1−xGex
5. Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
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1. Substrate temperature effects on PEALD HfAlO dielectric films for IGZO-TFT applications;Applied Surface Science;2024-08
2. High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5 Through Aluminum Capping;IEEE Electron Device Letters;2021-12
3. Ultrathin HfAlO ferroelectrics enhancing electron transport and perovskite solar cell performance;Journal of Materials Research;2021-03-12
4. Interface reaction kinetics in SiGe oxidation;Applied Physics Letters;2019-12-02
5. Improving Interface State Density and Thermal Stability of High-$\kappa$ Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5;IEEE Electron Device Letters;2019-05
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