Interface‐roughness and island effects on tunneling in quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342013
Reference20 articles.
1. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
2. Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
3. Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE
4. Temperature‐dependent optical spectra of single quantum wells fabricated using interrupted molecular beam epitaxial growth
5. Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption
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