Electrical properties of Si implanted with As through SiO2films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327418
Reference13 articles.
1. The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO2–Si
2. Residual defects in Si produced by recoil implantation of oxygen
3. Anomalous residual damage in Si after annealing of ``through‐oxide'' arsenic implantations
4. The effects of the recoil-implanted oxygen in Si on the electrical activation of As after through-oxide implantation
5. Depth distribution of knock‐on nitrogen in Si by phosphorus implantation through Si3N4films
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Raman image study of flash‐lamp annealing of ion‐implanted silicon;Journal of Applied Physics;1995-04
2. Ion Implantation;Fundamentals of Semiconductor Processing Technology;1995
3. Implantation damage and anomalous diffusion of implanted boron in silicon through SiO2 films;Physica Status Solidi (a);1993-07-16
4. Accumulation of implanted arsenic at the interface during annealing on thermally oxidized Si and SiO2 covered Si;Applied Surface Science;1990-01
5. Reduction of transient‐enhanced diffusion of boron in silicon by implantation through oxide;Applied Physics Letters;1989-02-13
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