Measurements of metal gate effective work function by x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2713993
Reference13 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2
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4. Electronic structure of a metal-semiconductor interface
5. Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices
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