Trap‐Assisted Memristive Switching in HfO2‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy

Author:

Zahari Finn1ORCID,Marquardt Richard1ORCID,Kalläne Matthias234,Gronenberg Ole5,Schlueter Christoph6,Matveyev Yury6ORCID,Haberfehlner Georg7ORCID,Diekmann Florian23ORCID,Nierhauve Alena28,Buck Jens28,Hanff Arndt23,Kolhatkar Gitanjali9ORCID,Kothleitner Gerald710ORCID,Kienle Lorenz45,Ziegler Martin1112,Carstensen Jürgen13,Rossnagel Kai2348ORCID,Kohlstedt Hermann14

Affiliation:

1. Nanoelectronics Faculty of Engineering Kiel University 24143 Kiel Germany

2. Institute of Experimental and Applied Physics Kiel University 24098 Kiel Germany

3. Ruprecht Haensel Laboratory Kiel University 24098 Kiel Germany

4. Kiel Nano Surface and Interface Science KiNSIS Kiel University 24118 Kiel Germany

5. Synthesis and Real Structure Faculty of Engineering, Kiel University 24143 Kiel Germany

6. Deutsches Elektronen‐Synchrotron DESY 22607 Hamburg Germany

7. Institute of Electron Microscopy and Nanoanalysis Graz University of Technology Graz 8010 Austria

8. Ruprecht Haensel Laboratory Deutsches Elektronen‐Synchrotron DESY 22607 Hamburg Germany

9. Department of Engineering Physics McMaster University, Hamilton Ontario L8S 4L7 Canada

10. Graz Centre for Electron Microscopy Graz 8010 Austria

11. Department of Electrical Engineering and Information Technology Technische Universtität Ilmenau 98693 Ilmenau Germany

12. Institute of Micro and Nanotechnologies MacroNano Technische Universtität Ilmenau 98693 Ilmenau Germany

13. Functional Nanomaterials Faculty of Engineering Kiel University 24143 Kiel Germany

Abstract

AbstractMemristive devices are under intense development as non‐volatile memory elements for extending the computing capabilities of traditional silicon technology by enabling novel computing primitives. In this respect, interface‐based memristive devices are promising candidates to emulate synaptic functionalities in neuromorphic circuits aiming to replicate the information processing of nervous systems. A device composed of Nb/NbOx/Al2O3/HfO2/Au that shows promising features like analog switching, no electro‐forming, and high current‐voltage non‐linearity is reported. Synchrotron‐based X‐ray photoelectron spectroscopy and depth‐dependent hard X‐ray photoelectron spectroscopy are used to probe in situ different resistance states and thus the origin of memristive switching. Spectroscopic evidence for memristive switching based on the charge state of electron traps within HfO2 is found. Electron energy loss spectroscopy and transmission electron microscopy support the analysis. A device model is proposed that considers a two‐terminal metal–insulator–semiconductor structure in which traps within the insulator (HfO2/Al2O3) modulate the space charge region within the semiconductor (NbOx) and, thereby, the overall resistance. The experimental findings are in line with impedance spectroscopy data reported in the companion paper (Marquardt et al). Both works complement one another to derive a detailed device model, which helps to engineer device performance and integrate devices into silicon technology.

Funder

Deutsche Forschungsgemeinschaft

Deutsches Elektronen-Synchrotron

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

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