Depth profiling of chemical states and charge density in HfSiON by photoemission spectroscopy using synchrotron radiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2841705
Reference21 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Band offsets of wide-band-gap oxides and implications for future electronic devices
3. Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates
4. Application of HfSiON as a gate dielectric material
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3. Annealing-Ambient-Dependent Thermal Stability of Ultrathin AlOxNy Films Grown by Metalorganic Chemical Vapor Deposition;Science of Advanced Materials;2012-10-01
4. Temperature dependence of chemical states and band alignments in ultrathin HfOxNy/Si gate stacks;Journal of Physics D: Applied Physics;2012-08-06
5. (Invited) Synchrotron Radiation Photoelectron Spectroscopy of Metal Gate/HfSiO(N)/SiO(N)/Si Stack Structures;ECS Transactions;2010-10-01
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