Optical determination of strains in heterostructures: GaAs/Si as an example
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343904
Reference19 articles.
1. Raman study of an epitaxial GaAs layer on a Si [100] substrate
2. Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si
3. Photoluminescence studies of selective‐area molecular beam epitaxy of GaAs film on Si substrate
4. Deformation potentials of the direct and indirect absorption edges of GaP
5. Low‐Temperature Elastic Constants of Gallium Arsenide
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