Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference12 articles.
1. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
2. Molecular beam epitaxy of GaAs and AlGaAs on Si
3. Metal‐semiconductor field‐effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
4. Optical properties of GaAs on (100) Si using molecular beam epitaxy
5. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
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