Dislocation loops as a mechanism for thermoelectric power factor enhancement in silicon nano-layers-Reference-Cited by-同舟云学术

Dislocation loops as a mechanism for thermoelectric power factor enhancement in silicon nano-layers

Published:2016-10-24 Issue:17 Volume:109 Page:173905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bennett Nick S.¹,Byrne Daragh²,Cowley Aidan³,Neophytou Neophytos⁴

Affiliation:

1. Nano-Materials Lab., Institute of Mechanical, Process and Energy Engineering, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom

2. School of Physical Science, Dublin City University, Glasnevin, Dublin 9, Ireland

3. European Astronaut Centre (EAC), European Space Agency (ESA), Linder Höhe, D-51147 Cologne, Germany

4. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom

Funder

Royal Society

European Research Council (ERC)

Science Foundation Ireland (SFI)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4966686

Reference23 articles.

1. Transport properties of silicon

2. Material and manufacturing cost considerations for thermoelectrics

3. Enhanced thermoelectric performance of rough silicon nanowires

4. Silicon nanowires as efficient thermoelectric materials

5. Optimization of the thermoelectric properties of nanostructured silicon

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