TEM-compatible microdevice for the complete thermoelectric characterization of epitaxially integrated Si-based nanowires

Author:

Sojo-Gordillo Jose M.12ORCID,Kaur Yashpreet2ORCID,Tachikawa Saeko23,Alayo Nerea1,Salleras Marc4ORCID,Forrer Nicolas2ORCID,Fonseca Luis4,Morata Alex1ORCID,Tarancón Albert15ORCID,Zardo Ilaria26ORCID

Affiliation:

1. Catalonia Institute for Energy Research, IREC, Jardins de les Dones de Negre 1, 08930, Sant Adrià de Besòs, Barcelona, Spain

2. University of Basel, Klingelbergstrasse 82, 4056, Basel, Switzerland

3. National Institute of Advanced Industrial Science and Technology, AIST, Tsukuba 1-1-1, Chuo Daisan Chuo Honkan 1F, Tsukuba, Japan

4. Institute of Microelectronics of Barcelona, IMB-CNM (CSIC), C/Til·lers s/n, Campus UAB, Bellaterra, 08193, Barcelona, Spain

5. ICREA, Passeig de Llúis Companys, 23, 08010 Barcelona, Spain

6. Swiss Nanoscience Institute, SNI, Klingelbergstrasse 82, 4056, Basel, Switzerland

Abstract

A MEMS device for the evaluation of suspended integrated single nanowires is presented, allowing transmission and electrothermal experiments for structural and thermoelectric characterization. μ-Raman thermometry confirms nanowires' epitaxy.

Funder

Agencia Estatal de Investigación

European Commission

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Ministerio de Educación y Formación Profesional

Departament d'Empresa i Coneixement, Generalitat de Catalunya

European Research Council

Agència de Gestió d'Ajuts Universitaris i de Recerca

Publisher

Royal Society of Chemistry (RSC)

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