High performance Ga0.47In0.53As photoconductive detectors grown by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97618
Reference9 articles.
1. Chemical beam epitaxy of InP and GaAs
2. Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature
3. Chemical beam epitaxy of InGaAs
4. Preparation and properties of Ga<inf>1-x</inf>Al<inf>x</inf>As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
5. A new GaAs, GaP, and GaAsxP1−x vacuum deposition technique using arsine and phosphine gas
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1. Sonochemical Preparation of GaSb Nanoparticles;Inorganic Chemistry;2002-02-01
2. Solvothermal Co-reduction Route to the Nanocrystalline III−V Semiconductor InAs;Journal of the American Chemical Society;1997-08-01
3. Comparison of InGaAs/InP photodetectors for microwave applications;Microwave and Optical Technology Letters;1994-05
4. Integration of a curved hybrid waveguide lens and photodetector array in a GaAs waveguide;Applied Optics;1992-09-01
5. Low-light-level photoconductivity in semi-insulations GaAs;Electronics Letters;1992
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