A comparison of indium arsenide antimonide and mercury cadmium telluride as long wavelength infrared detector materials-Reference-Cited by-同舟云学术

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A comparison of indium arsenide antimonide and mercury cadmium telluride as long wavelength infrared detector materials

Published:2020-08-21 Issue:7 Volume:128 Page:075704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ciani Anthony J.¹,Grein Christoph H.²,Sarney Wendy L.³^ORCID,Svensson Stefan P.³,Donetski Dmitri V.⁴,Belenky Gregory L.⁴

Affiliation:

1. Sivananthan Laboratories, Inc., 590 Territorial Dr Ste H, Bolingbrook, Illinois 60440, USA

2. Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059, USA

3. CCDC Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, Maryland 20783, USA

4. Department of ECE, Stony Brook University, Stony Brook, New York 11794-2350, USA

Funder

Army Research Office

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0017924

Reference25 articles.

1. Infrared detectors: status and trends

2. Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy

3. Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials

4. Proposal for strained type II superlattice infrared detectors

5. InAsSb strained-layer superlattices for long wavelength detector applications

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design considerations for a long-wavelength InAsSb detector diode;Semiconductor Science and Technology;2024-05-20

2. Review of virtual substrate technologies for 6.3 Ångström lattice constants;Journal of Vacuum Science & Technology A;2023-06-21

3. Dislocation analysis of epitaxial InAsSb on a metamorphic graded layer using x-ray topography;Journal of Applied Physics;2022-05-14

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