Dislocation analysis of epitaxial InAsSb on a metamorphic graded layer using x-ray topography
Author:
Affiliation:
1. US Naval Research Laboratory, Washington, DC 20375, USA
2. CCDC Army Research Laboratory, Adelphi, Maryland 20783, USA
Abstract
Funder
Office of Naval Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0091954
Reference19 articles.
1. 4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs1-xSbxstrained layer superlattices
2. Recent progress in infrared detector technologies
3. A comparison of indium arsenide antimonide and mercury cadmium telluride as long wavelength infrared detector materials
4. Band gap of InAs1−xSbxwith native lattice constant
5. Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy
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