Doping effects in reactive plasma etching of heavily doped silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95918
Reference9 articles.
1. Etching Characteristics of Phosphorus Containing Polycrystalline Silicon in a CF 4 Plasma
2. Anisotropic plasma etching of polysilicon
3. The design of plasma etchants
4. Silicon etching mechanism and anisotropy in CF4+O2plasma
5. Surface processes in plasma-assisted etching environments
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