Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2197305
Reference28 articles.
1. Cavity formation and impurity gettering in He-implanted Si
2. Nanovoid formation in helium-implanted single-crystal silicon studied byin situtechniques
3. Helium desorption/permeation from bubbles in silicon: A novel method of void production
4. Effect of implant temperature on defects created using high fluence of helium in silicon
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2. Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures;Journal of Applied Physics;2018-10-28
3. Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope;Physical Review B;2018-03-07
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