Effect of implant temperature on defects created using high fluence of helium in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1531814
Reference18 articles.
1. Voids in Silicon by He Implantation: From Basic to Applications
2. Helium desorption/permeation from bubbles in silicon: A novel method of void production
3. Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon
4. He-induced cavity formation in silicon upon high-temperature implantation
5. The effects of implantation temperature on He bubble formation in silicon
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