He-induced cavity formation in silicon upon high-temperature implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Solute Binding at Void Surfaces in Silicon and germanium
2. Proximity gettering of transition metals in separation by implanted oxygen structures
3. Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation
4. Application of hydrogen ion beams to Silicon On Insulator material technology
5. Evolution of Helium Platelets and Associated Dislocation Loops inα-SiC
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1. TEM characterisation of helium platelets in implanted uranium dioxide;Journal of Nuclear Materials;2020-01
2. Dynamic behavior of helium bubbles at high temperature in Si studied by in situ TEM, STEM-EELS, and TDS;Journal of Applied Physics;2019-10-07
3. Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures;Journal of Applied Physics;2018-10-28
4. Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C;Applied Surface Science;2018-10
5. Structural evolution of thermal annealed Si(0 0 1) surface layers fabricated by plasma immersion He + implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-09
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