Effect of doping on photoluminescence upconversion in GaAs/AlxGa1−xAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1491303
Reference11 articles.
1. High-Efficiency Energy Up-Conversion by an "Auger Fountain" at an InP-AIInas Type-II Heterojunction
2. Low-temperature anti-Stokes luminescence mediated by disorder in semiconductor quantum-well structures
3. High‐efficiency energy up‐conversion at GaAs‐GaInP2 interfaces
4. Interface-induced conversion of infrared to visible light at semiconductor interfaces
5. Mechanisms of photoluminescence upconversion at the GaAs/(ordered) GaInP2 interface
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