Intersubband transitions for single, double and triple Si -doped GaAs layers
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/36/i=20/a=006/pdf
Reference40 articles.
1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
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5. Radiative transitions associated with hole confinement at Si δ-doped planes in GaAs
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1. Hydrostatic pressure and interlayer distance effects on non-linear optical proprieties in n-type double delta-doped GaAs quantum wells;Physica Scripta;2020-09-03
2. Nonlinear intersubband absorption and refractive index change in n-type δ-doped GaAs for different donor distributions;The European Physical Journal Plus;2015-01
3. Asymmetric GaAs n-type double δ-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field;Journal of Luminescence;2014-03
4. Nonlinear optical properties in an asymmetric double δ-doped quantum well with a Schottky barrier: Electric field effects;physica status solidi (b);2013-09-12
5. Nonlinear absorption coefficient and relative refraction index change for an asymmetrical double δ-doped quantum well in GaAs with a Schottky barrier potential;Physica B: Condensed Matter;2013-09
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