Nonlinear optical properties in an asymmetric double δ-doped quantum well with a Schottky barrier: Electric field effects-Reference-Cited by-同舟云学术

Nonlinear optical properties in an asymmetric double δ-doped quantum well with a Schottky barrier: Electric field effects

Published:2013-09-12 Issue:2 Volume:251 Page:415-422
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Rojas-Briseño J. G.¹,Martínez-Orozco J. C.¹,Rodríguez-Vargas I.¹,Mora-Ramos M. E.²³,Duque C. A.³

Affiliation:

1. Unidad Académica de Física; Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina con Paseo la Bufa S/N; CP 98060 Zacatecas, Zac. México

2. Facultad de Ciencias; Universidad Autónoma del Estado de Morelos; Av. Universidad 1001 CP 62209 Cuernavaca MorelosMéxico

3. Grupo de Materia Condensada-UdeA, Instituto de Física; Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA; Calle 70 No. 52-21 Medellín Colombia

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201350050/fullpdf

Reference37 articles.

1. Si planar doping of GaAs

2. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs

3. Calculation of electron density in planar-doped high electron mobility transistors

4. Planar doping of p-type ZnSe layers with lithium grown by molecular beam epitaxy

5. Electronic transport in two-dimensional Si:Pδ-doped layers

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