Development of strain reduced GaN on Si (111) by substrate engineering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2012538
Reference19 articles.
1. Ultraviolet and violet GaN light emitting diodes on silicon
2. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
3. Visible-blind GaN Schottky barrier detectors grown on Si(111)
4. High electron mobility AlGaN/GaN heterostructure on (111) Si
5. High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy
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