Determination of the valence‐band discontinuity of InP1−xGaxP1−zAsz(x∼0.13,z∼0.29) by quantum‐well luminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90702
Reference10 articles.
1. Theory of the energy-band lineup at an abrupt semiconductor heterojunction
2. Carrier collection in a semiconductor quantum well
3. Photopumped laser operation of MO‐CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K)
4. Single and multiple thin‐layer (Lz≲400 A) In1−xGaxP1−zAsz‐InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K)
5. Limitations of the direct‐indirect transition on In1−xGaxP1−zAszheterojunctions
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1. Band parameters for III–V compound semiconductors and their alloys;Journal of Applied Physics;2001-06
2. Optimized design parameters of InGaAsInP quantum well lasers;Materials Science and Engineering: B;1995-12
3. Determining energy‐band offsets in quantum wells using only spectroscopic data;Journal of Applied Physics;1993-06-15
4. Band Offsets in Semiconductor Heterojunctions;Solid State Physics;1992
5. A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells;MRS Proceedings;1991
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