Optical enhancement of the electron paramagnetic resonance signal from SiIIIcenters at the Si/SiO2interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328449
Reference10 articles.
1. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
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4. Explanation of the large spin-dependent recombination effect in semiconductors
5. Properties of photoinduced EPR signals from real silicon and germanium surfaces
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1. Extended fine structure of auger spectra of thermally oxidized silicon surface;Colloid Journal;2015-09
2. Behaviour of total surface charge in SiO2–Si system under short-pulsed ultraviolet irradiation cycles characterised by surface photo voltage technique;Applied Surface Science;2009-04
3. Photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon;Materials Chemistry and Physics;2000-06
4. Multiphoton photoemission and electric-field-induced optical second-harmonic generation as probes of charge transfer across theSi/SiO2interface;Physical Review B;1999-01-15
5. Modelling the ultraviolet irradiation effect on the effective minority carrier recombination lifetime of silicon wafers;Journal of Applied Physics;1999-01-15
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