Behaviour of total surface charge in SiO2–Si system under short-pulsed ultraviolet irradiation cycles characterised by surface photo voltage technique-Reference-Cited by-同舟云学术

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Behaviour of total surface charge in SiO2–Si system under short-pulsed ultraviolet irradiation cycles characterised by surface photo voltage technique

Published:2009-04 Issue:13-14 Volume:255 Page:6545-6550
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kang Ban-Hong,Lee Wah-Pheng,Yow Ho-Kwang,Tou Teck-Yong

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference33 articles.

1. Characterization and Control of Native Oxide on Silicon

2. Wearout and Breakdown in Thin Silicon Oxide

3. Discharge of trapped electrons from MOS structures

4. The effects of water on oxide and interface trapped charge generation in thermal SiO2films

5. Trap generation at Si/SiO2interface in submicrometer metal‐oxide‐semiconductor transistors by 4.9 eV ultraviolet irradiation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-Surface Electronic Contribution to Semiconductor Elasticity;Physical Review Applied;2017-09-18

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