Trap generation at Si/SiO2interface in submicrometer metal‐oxide‐semiconductor transistors by 4.9 eV ultraviolet irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357046
Reference8 articles.
1. Ultraviolet bleaching and regeneration of ⋅Si≡Si3centers at the Si/SiO2interface of thinly oxidized silicon wafers
2. Mechanism of Ultraviolet Irradiation Effect on Si-SiO2Interface in Silicon Wafers
3. Transient recovery of minority‐carrier lifetime in silicon after ultraviolet irradiation
4. Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements
5. Electron Trapping and Interface State Generation in PMOSFET's: Results from Gate Capacitance
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2. Behaviour of total surface charge in SiO2–Si system under short-pulsed ultraviolet irradiation cycles characterised by surface photo voltage technique;Applied Surface Science;2009-04
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