Growth of β‐SiC film by pyrolysis of polyimide Langmuir–Blodgett films on silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359092
Reference13 articles.
1. Recent developments in SiC single-crystal electronics
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3. Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer
4. Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates
5. Studies of SiC formation on Si (100) by chemical vapor deposition
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1. Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir–Blodgett films on silicon substrate;Nanotechnology;2024-04-09
2. Molecular Layer Deposition and Pyrolysis of Polyamide Films on Si(111) with Formation of β-SiC;Russian Journal of Physical Chemistry A;2021-07
3. Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir–Blodgett films;Japanese Journal of Applied Physics;2017-05-31
4. Growth Kinetics of Silicon Carbide Film Prepared by Heating Polystyrene/Si(111);Chinese Journal of Chemical Physics;2009-02
5. Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition;SiC Power Materials;2004
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